Method of obtaining high quality silicon dioxide passivation on

Details Method of obtaining high quality silicon dioxide passivation on Method of obtaining high quality silicon dioxide passivation on

1992-06-05

1995-10-17

Thomas, Tom

Fishing, trapping, and vermin destroying

437239, 437100, H01L 2102

Patent

active

054591074

ABSTRACT:
A method of obtaining high quality passivation layers on silicon carbide surfaces by oxidizing a sacrificial layer of a silicon-containing material on a silicon carbide portion of a device structure to substantially consume the sacrificial layer to produce an oxide passivation layer on the silicon carbide portion that is substantially free of dopants that would otherwise degrade the electrical integrity of the oxide layer.

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J. W. Palmour, et al., Dopant Redistribution during Thermal Oxidation of Monocrystalline Beta-SiC Thin Films, Journal of Electrochemical Society, vol. 136, No. 2, Feb. 1989, pp. 502-507.
"Wet and Dry Oxidation of Single Crystal .beta.-SiC: Kinetics and Interface Characteristics", John W. Palmour, H. J. Kim, and R. F. Davis, Mat. Res. Soc. Symp. Proc., vol. 54, pp. 553-559.
"SiC Electronics for High Temperature Control Systems", Dale M. Brown, et. al. (4 pages), presented at GOMAC-91, Nov. 4-7, 1991, Orlando, Fla.
"Dopant Redistribution During Thermal Oxidation of Monocrystalline Beta-SiC Thin Films", The Journal of the Electrochemical Society, vol. 136, No. 2, Feb. 1989, pp. 502-507.
"6H-Silicon Carbide Transistors for High Temperature Operation", John W. Palmour, et al., Proceedings, First International High Temperature Electronics Conference, Jun. 16-20, 1991, pp. 511-518.

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