Semiconductor device and method for forming the same

Details Semiconductor device and method for forming the same Semiconductor device and method for forming the same

1994-08-22

1996-10-08

Crane, Sara W.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257351, 257686, 437 40, 437 41, H01L 2701, H01L 2976, H01L 2302

Patent

active

055634400

ABSTRACT:
A multilayer semiconductor integrated circuit which does not suffer from latchup. The circuit comprises a semiconductor substrate, a first MOS transistor formed on the substrate, an interlayer insulator deposited on the first transistor, and a second MOS transistor formed on the interlayer insulator. The two transistors have different conductivity types. The gate electrode of the second transistor consists mainly of metal or metal silicide, e.g. aluminum. The upper and side surfaces of the gate electrode is coated with a material comprising an oxide of the metal or metal silicide.

REFERENCES:
patent: 4272880 (1981-06-01), Pashley
patent: 4399605 (1983-08-01), Dash et al.
patent: 4654121 (1987-03-01), Miller et al.
patent: 4754314 (1988-06-01), Scott et al.
patent: 4939568 (1990-07-01), Kato et al.
patent: 5047356 (1991-09-01), Li et al.
patent: 5128732 (1992-07-01), Sugahara et al.

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