Method of producing monocrystal on insulator

Details Method of producing monocrystal on insulator Method of producing monocrystal on insulator

1980-05-06

1982-04-06

Bernstein, Hiram

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156624, 156DIG80, 156DIG105, C30B 1900

Patent

active

043234178

ABSTRACT:
A method for producing monocrystal on insulator is disclosed. Initially, an epitaxial layer is created on the single crystal substrate. This epitaxial layer may be formed by direct deposition of the monocrystal layer, or through epitaxial monocrystal growth induced after a polycrystal or amorphous layer has been deposited upon the substrate. By appropriately scanning a laser or other focused energy source beginning at some point within the epitaxial layer, and moving into the polycrystalline or amorphous layer over the insulator region, the polycrystalline or amorphous layer will melt, then upon resolidifying it will be monocrystal in structure due to its monocrystal neighbor, the epitaxial layer.

REFERENCES:
patent: 3585088 (1971-06-01), Schwuttke et al.
patent: 3600237 (1971-08-01), Davis et al.
patent: 3996094 (1976-12-01), Lesk
patent: 4059461 (1977-11-01), Fan et al.
Tamura et al., Japanese Journal of Applied Physics, v 19, No. 1, Jan. 1980, pp. 23-26.

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