Semiconductor part and fabrication method thereof, and structure

Details Semiconductor part and fabrication method thereof, and structure Semiconductor part and fabrication method thereof, and structure

1999-09-17

2000-08-22

Hardy, David

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Bump leads

257738, 257778, 257786, H01L 2348

Patent

active

061076856

ABSTRACT:
Disclosed is a semiconductor part improved to enhance the connection strength of land terminals upon mounting of the semiconductor part and to give a sufficient margin to the arrangement pitch of wires passing through the land terminals, a fabrication method thereof, and a structure and method of mounting the semiconductor part. The semiconductor part includes land terminals for bumps (or land terminals provided with bumps), arranged in a grid pattern, which are connected to surfaces of electrode pads via re-arrangement wires on a base; wherein the land terminals for bumps (or land terminals provided with bumps) are classified into outer land terminals arranged on the outer peripheral side of the base and inner land terminals arranged inside the outer land terminals; and the outer land terminals each have a diameter larger than that of each of the inner land terminals and/or have a pitch larger than an arrangement pitch of the inner land terminals.

REFERENCES:
patent: 5686699 (1997-11-01), Chu et al.
patent: 5828128 (1998-10-01), Higashiguchi et al.
patent: 5874776 (1999-02-01), Kresge et al.
patent: 5977617 (1999-11-01), Kata

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