Semiconductor device having capacitor and manufacturing method t

Details Semiconductor device having capacitor and manufacturing method t Semiconductor device having capacitor and manufacturing method t

1998-05-04

2000-08-22

Wojciechowicz, Edward

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257296, 257306, 257310, 257626, 257635, 257644, 257650, H01L 2972

Patent

active

061076570

ABSTRACT:
A semiconductor device forming a capacitor through an interlayer insulating layer on a semiconductor substrate on which an integrated circuit is formed. This semiconductor device has an interlayer insulating layer with moisture content of 0.5 g/cm.sup.3 or less, which covers the capacitor in one aspect, and has a passivation layer with hydrogen content of 10.sup.21 atoms/cm.sup.3 or less, which covers the interconnections of the capacitor in other aspect. By thus constituting, deterioration of the capacitor dielectric can be prevented which brings about the electrical reliability of the ferroelectric layer or high dielectric layer.

REFERENCES:
patent: 4735915 (1988-04-01), Kita et al.

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