Ferroelectric transistors, semiconductor storage devices, method

Details Ferroelectric transistors, semiconductor storage devices, method Ferroelectric transistors, semiconductor storage devices, method

1997-10-28

2000-08-22

Saadat, Mahshid

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257316, 365145, H01L 2976

Patent

active

061076562

ABSTRACT:
A method of manufacturing a ferroelectric transistor is provided by which the characteristic of the transistor is not degraded because of a heated process. The ferroelectric transistor has a gate unit on the underlying structure. The gate unit includes a gate electrode, a ferroelectric film and a gate insulation film deposited on one another in this order. A channel layer is provided on the gate insulation film. A first main electrode and a second main electrode are provided in a spaced apart manner on the channel layer. The channel layer is used as a channel in operating the transistor. Thus, the carrier density of the channel is controlled by using the spontaneous polarization of the ferroelectric film.

REFERENCES:
patent: 5384729 (1995-01-01), Sameshima
patent: 5789775 (1998-08-01), Evans, Jr. et al.
Y. Katoh, S. Fujeda, Y. Hayashi, and T. Kunio, "Non-Volatile FCG (Ferroelectric-Capacitor and Transistor-Gate Connection) Memory Cell with Non-Destructive Read-Out Operation", 1996 Symposium on VLSI Technology Digest of Technical Papers, pp. 56-57.
P. Mei, J. B. Boyce, M. Hack, R. Lujan, S. E. Ready, D. K. Fork, R. I. Johnson, and G. B. Anderson, "Grain Growth in Laser Dehydrogenated and Crystallize Polycrystalline Silicon for Thin Film Transistors", 1994 American Institute of Physics, May 20, 1994, pp. 3194-3199.
K. Sugibuchi, Y. Kurogi, and N. Endo, "Ferroelectric Field-Effect Memory Device Using B1.sub.4 Ti.sub.3 O.sub.12 Film", 1975 American Institute of Physics, Jul. 1975, pp. 2877-2881.

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