Plasma processing apparatus

Chemistry: electrical and wave energy – Apparatus – Coating – forming or etching by sputtering

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156345, 118723, 42218604, H01H 146, C23C 1600, B01J 1912

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active

048265853

ABSTRACT:
An electrode assembly is described for use in plasma processes, such as reactive dry etching and plasma deposition. This includes a primary electrode which is electrically insulated from the vacuum chamber in which it is mounted in use. The primary electrode may be connected to an r.f. or d.c. power source and has a cylindrical hole with an insulated subsidiary electrode at the bottom of the hole which can be earthed or allowed to adopt a floating voltage in use. Magnets are used to trap electrons adjacent the walls of the hole. These may consist of a plurality of elongate magnets positioned around an annular pole plate with their largest dimension arranged longitudinally with respect to the pole plate and the hole, with their magnetic axes arranged radially, and with alternating polarity around the inner periphery of the pole plate. In use an r.f. frequency (e.g. 13.56 MHz) may be applied to the primary electrode while a reactant gas (e.g. C.sub.2 F.sub.6 or a C.sub.2 F.sub.6 /CHF.sub.3 mixture) is admitted to the vacuum chamber. The silicon wafer or other substrate to be etched is placed on a substrate table within the chamber which can also be connected to an r.f. power source.

REFERENCES:
patent: 4483737 (1984-11-01), Mantei
patent: 4491496 (1985-01-01), Laporte et al.
B. N. Chapman et al, IBM Technical Disclosure Bulletin, vol. 21, No. 3, Aug. 1978, p. 1197.
Proceedings of the 3eme Symposium International sur le Gravure Seche et le Depot Plasma en Microeletronique, Cachan, Nov. 26-29, 1985, pp. 145-153.
J. Vac. Sci. Technol., B4(1), Jan./Feb., 1986, pp. 1-5.
Appl. Phys. Lett. 43(1), Jul. 1, 1983, pp. 84-86.
Abstract No. 279 in Extended Abstracts of the Electrochemical Society Meeting vol. 86-2, (1986), p. 418.
Solid State Technology, Apr. 1985, pp. 263-265.
Appl. Phys. Lett. 37(7), Oct. 1, 1980, pp. 646-648.

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