High power self commutating semiconductor switch

Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – With contact or lead

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Details

257724, 257706, H01L 2302, H01L 2312, H01L 2316

Patent

active

052834638

ABSTRACT:
In one embodiment, the invention is a packaged high power electronic switch in the form of a semiconductor chip having metalized planar cathode and anode terminals and a gate terminal. A refractory annular ring has planar open end faces and side walls having stepped portions. A pair of thermally and electrically conductive planar substrates is bonded to the opposite end faces of the annular ring and is maintained in spaced relation thereby, forming an enclosed space. At least one conductive strap within the space is supported by the stepped portion of the internal side wall and extends to one of the substrates forming an electrical and thermal path. One of said conductive substrates receives one of the planar terminals of the chip in intimate electrical and thermal contact. The strap is electrically coupled to the other of said terminals, for forming a high current path between the substrates via the strap. Additional components, such as a commutating diode and gate protection zener diode, may be employed and provide a self protected switch assembly.

REFERENCES:
patent: 3651434 (1972-03-01), McGeough et al.
patent: 3784884 (1974-01-01), Zoroglu
patent: 4881116 (1989-11-01), Hidada et al.

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