Semiconductor on insulator transistor

Details Semiconductor on insulator transistor Semiconductor on insulator transistor

1991-03-05

1994-02-01

Ngo, Ngan

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257369, 257401, H01L 2702, H01L 2701, H01L 2713

Patent

active

052834573

ABSTRACT:
The described embodiments of the present invention provide a method and structure for actively controlling the voltage applied to the channel of field effect transistors. In the described embodiments, a transistor connected to the channel region is fabricated. The channel transistor has opposite conductivity type to the transistor using the main channel region. The source of the channel transistor is connected to the channel and the drain of the channel transistor is connected to a reference voltage. The same gate is used to control the channel transistor and the main transistor. When a voltage which causes the main transistor to be on is applied, the channel transistor is off, thus allowing the channel to float and allowing higher drive current. On the other hand, when a voltage to turn off the main transistor is applied, the channel transistor is turned on, thus clamping the channel region to the reference voltage. This allows for consistent threshold voltage control of the main transistor.
In a preferred embodiment, the channel of the main transistor is used as the source of the channel transistor and the gate of the main transistor extends onto the channel region of the channel transistor. The reference voltage is then connected to the drain region which is formed on the opposite side of the channel transistor channel region from the main transistor's channel.

REFERENCES:
patent: 4231055 (1980-10-01), Iizuka
patent: 4300061 (1981-11-01), Mihalich et al.
patent: 4330849 (1982-05-01), Togei et al.
patent: 4384300 (1983-05-01), Iizuka
patent: 4395726 (1983-07-01), Maeguchi
patent: 4872042 (1989-10-01), Maed et al.
patent: 4996575 (1991-02-01), Ipri et al.

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