Method of removing a carbon-contaminated layer from a silicon su

Details Method of removing a carbon-contaminated layer from a silicon su Method of removing a carbon-contaminated layer from a silicon su

1997-01-10

2000-08-22

Kunemund, Robert

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438680, 438719, 438725, 438906, 117 90, 117 92, 117 97, 216 64, 216 67, 216 79, 216 81, C30B 2504

Patent

active

061071978

ABSTRACT:
A method of removing a carbon-contaminated layer from a silicon substrate surface before a silicon epitaxial growth on the silicon substrate surface. A carbon-contaminated layer on the silicon substrate is exposed to a chlorine radical to cause a chemical reaction of the chlorine radical with carbon atoms of the carbon-contaminated layer to generate chlorine carbide to form chlorine carbide for removal of the carbon-contaminated layer from the silicon substrate surface, wherein the chlorine radical has been generated by passing a chlorine gas through a heating filament so that the chlorine radical is generated at a much higher generation efficiency than when the chlorine radical were generated by using a deep ultraviolet ray. This means that the use of the filament for generating the chlorine radical at the higher generation efficiency results in a larger amount of the chlorine radical to be irradiated onto the carbon-contaminated layer and then reacted with carbon atoms to generate chlorine carbide at a higher efficiency whereby carbon on the silicon substrate surface or the carbon-contaminated layer may be removed therefrom at a higher efficiency. The epitaxial growth of the silicon layer on the carbon-free or carbon pile-up free silicon substrate surface results in the epitaxial silicon layer having a high crystal quality or crystal perfection.

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