Method of forming an interlevel dielectric

Details Method of forming an interlevel dielectric Method of forming an interlevel dielectric

1996-07-10

2000-08-22

Quach, T. N.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438623, 438624, 438631, H01L 214763

Patent

active

061071838

ABSTRACT:
An interlevel dielectric structure includes forming first and second dielectric layers between which are located lines of a conductive material that are also formed with a dielectric material in spaces between the lines of conductive material, with the lower surface of the dielectric material extending lower than the lower surface of lines of conductive material adjacent thereto, and the upper surface of the dielectric material extending higher than the upper surface of conductive material adjacent thereto, thus reducing fringe and total capacitance between the lines of conductive material. The dielectric material, which has a dielectric constant of less than about 3.6, does not extend directly above the upper surface of the lines of conductive material, allowing formation of subsequent contacts down to the lines of conductive material without exposing the dielectric material to further processing. Various methods for forming the interlevel dielectric structure are disclosed.

REFERENCES:
patent: 5399235 (1995-03-01), Mutsaers et al.
patent: 5420075 (1995-05-01), Homma et al.
patent: 5445996 (1995-08-01), Kodera et al.
patent: 5486493 (1996-01-01), Jeng
patent: 5599740 (1997-02-01), Jang et al.
patent: 5677239 (1997-10-01), Isobe
patent: 5708303 (1998-01-01), Jeng
patent: 5795829 (1998-08-01), Shen

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