Semiconductor device manufacturing: process – Making passive device
Patent
1998-02-20
2000-08-22
Fahmy, Wael
Semiconductor device manufacturing: process
Making passive device
438680, 438685, 4272552, 427576, 118723IR, H01L 2120
Patent
active
061071528
ABSTRACT:
Methods of forming tungsten-comprising layers are described. In one implementation, a substrate is provided having a surface over which a tungsten-comprising layer is to be formed. A gas plasma is generated comprising a reactive species, with the substrate not being exposed to the gas plasma. The reactive species from the gas plasma and a source gas comprising tungsten are provided into proximity with the substrate surface and under conditions which are effective to form a tungsten-comprising layer over at least a portion of the surface. In another implementation, a tungsten source gas is provided into a chamber having a substrate positioned therein. A gaseous reactive species formed from a gas plasma is provided into proximity with the substrate within the chamber and under conditions which are effective to form a layer comprising tungsten over at least a portion of the substrate. At least some of the gaseous reactive species is (are) generated by gas plasma at a plasma-generating location which is remote from the substrate. In another implementation, a layer which is predominately tungsten nitride is formed over a substrate surface within a processing chamber. At a processing location which is remote from the substrate surface, a nitrogen-comprising gas is exposed to conditions which are effective to form an activated nitrogen-comprising species from the gas. The substrate surface is exposed to a tungsten-comprising source gas and the activated nitrogen-comprising species within the chamber under conditions effective to form a layer comprising tungsten nitride over at least a portion of the surface.
REFERENCES:
patent: Re35785 (1998-05-01), Sandhu et al.
patent: 4022872 (1977-05-01), Carson et al.
patent: 4782032 (1988-11-01), Geissberger et al.
patent: 4823182 (1989-04-01), Okumura
patent: 4839311 (1989-06-01), Riley et al.
patent: 4847212 (1989-07-01), Balzan et al.
patent: 4849376 (1989-07-01), Balzan et al.
patent: 4897709 (1990-01-01), Yokayama et al.
patent: 4913929 (1990-04-01), Moslehi et al.
patent: 4965218 (1990-10-01), Geissberger et al.
patent: 5173449 (1992-12-01), Lorenzen et al.
patent: 5180435 (1993-01-01), Markunas et al.
patent: 5196360 (1993-03-01), Doan et al.
patent: 5248636 (1993-09-01), Davis et al.
patent: 5278448 (1994-01-01), Fujii
patent: 5314843 (1994-05-01), Yu et al.
patent: 5350711 (1994-09-01), Hall
patent: 5504040 (1996-04-01), Moslehi
patent: 5506449 (1996-04-01), Nakano et al.
patent: 5612558 (1997-03-01), Harshfield
patent: 5622888 (1997-04-01), Sekine et al.
patent: 5641707 (1997-06-01), Moslehi
patent: 5930106 (1999-07-01), Deboer et al.
PCT publication, International Publication No. WO 98/23389 No date.
Nagayoshi et al., "Preparation of a Si-.sub.1-x N.sub.x :H Film Using N.sub.2 Microwave Afterglow Chemical Vapor Deposition Method", Jpn. J. Appl. Phys. vol. 32 (1993) PT. 1, No. 12A, p. 5791 -5795.
Hsu et al., "Advances in Remote Plasma-enhanced Chemical Vapor Deposition for Low Temperature In Situ Hydrogen Plasma Clean and Si and Si.sub.1-x Ge.sub.x Epitaxy", Journal of Electric Materials, vol. 21, No. 1, (1992), p. 65-74.
Ihara et al., "Synthesis of MoN and RuN by Active Nitrogen Sputtering", IEEE Transactions on Magnetics, vol. MAG-23, No. 2, (Mar. 1987), p. 1011-1013.
Landheer et al., "Growth and characterization of silicon nitride films produced by remote microwave plasma chemical vapor deposition", J. Vac. Sci. Technol. A 9 (5), (Sep./Oct. 1991), p. 2594-2600.
Alexandrov et al., "Remote Plasma-enhanced Chemical Vapour Deposition of Silicon Nitride Films: The Effect of Diluting Nitrogen with Helium", J. Mater. Chem, Vol. 5, (1995), p. 457-460.
Belmonte et al., "Advantages of Post-Discharges in CVD Processes", Supplement Le Vide Science Technique et Applications N.sup.o 279 Janvier-Fevier-Mars (1996), p. 170-172.
Eaton Kurt
Fahmy Wael
Micro)n Technology, Inc.
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