Semiconductor device having an overlapping memory cell

Details Semiconductor device having an overlapping memory cell Semiconductor device having an overlapping memory cell

1992-07-06

1994-03-01

Limanek, Robert

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257903, H01L 2978

Patent

active

052910539

ABSTRACT:
A semiconductor device having an overlapping memory cell (10), which includes a split wordline configuration and intersects at least a portion of the driver gate electrodes with each wordline. In one embodiment, a semiconductor substrate (11) has first and second active regions (13, 15) therein. A driver transistor (20) is formed in the semiconductor substrate (11), wherein the gate electrode (19) of the driver transistor (20) has a first portion overlying the second active region (15), a second portion extending beyond the first active region, and a third portion contacting the first active region (13). A wordline overlies (42) the second active region (15), wherein a first portion of the wordline forms the gate electrode of an access transistor (34) and a second portion of the wordline intersects the second portion of the driver transistor gate electrode (19) forming an overlap region (31).

REFERENCES:
patent: 5122857 (1992-06-01), Ikeda et al.
patent: 5210429 (1993-05-01), Adan
K. Itabashi, et al.; "A Split Wordline Cell For 16Mb SRAM Using Polysilicon Sidewall Contacts"; IEDM; pp. 477-480 (1991).
H. Ohkubo, et al.; "16Mbit SRAM Cell Technologies for 2.0V Operation"; IEDM; pp. 481-484 (1991).

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