MOS device having reduced gate-to-drain capacitance

Details MOS device having reduced gate-to-drain capacitance MOS device having reduced gate-to-drain capacitance

1991-10-22

1994-03-01

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257335, 257337, 257341, H01L 2976, H01L 2994, H01L 31062, H01L 31113

Patent

active

052910504

ABSTRACT:
A metal-oxide-semiconductor (MOS) device designed to achieve reduced gate-to-drain capacitance is disclosed. The device has gate-electrode layer consisting of alternating polarity regions, such that regions of the gate-electrode layer not involved in channel operations have a conductivity type different from the conductivity type of the gate-electrode-layer regions actually involved in channel operations. Since the alternating conductivity regions form a capacitance in series to the gate-to-drain capacitance, the gate-to-drain capacitance of the device is reduced. An embodiment of the invention also incorporates increased-thickness regions of the gate-oxide film, which regions are disposed over semiconductor areas at which no channel operation occurs.

REFERENCES:
patent: 4831424 (1989-05-01), Yoshida et al.
patent: 4901124 (1990-02-01), Seki
patent: 4963970 (1990-10-01), Throngnumchai et al.

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