Non-volatile storage device with impurities in nitride toward so

Details Non-volatile storage device with impurities in nitride toward so Non-volatile storage device with impurities in nitride toward so

1992-05-19

1994-03-01

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257639, 365184, H01L 2978, H01L 2934

Patent

active

052910482

ABSTRACT:
A non-volatile storage device such as an EPROM (erasable programmable read only memory) and a method of manufacturing the same. A silicon oxide film, a silicon nitride film and a silicon oxide film are formed one after another on a gate region of a semiconductor substrate in which a source region and a drain region are formed. To restrict carrier capture to the silicon nitride film near the source region, impurity ions such as hydrogen ions are mixed with the silicon nitride film at a side toward the source region.

REFERENCES:
patent: 4173791 (1979-11-01), Bell
patent: 4481527 (1984-11-01), Chen et al.
patent: 4870470 (1989-09-01), Bass, Jr. et al.
Li et al. "Stable Gate MOSFET Structures" IBM Technical Disclosure Bulletin vol. 15, No. 9 Feb. 1973 pp. 2937-2938.

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