Method of manufacturing a thin Hg.sub.1-x Cd.sub.x Te film

Details Method of manufacturing a thin Hg.sub.1-x Cd.sub.x Te film Method of manufacturing a thin Hg.sub.1-x Cd.sub.x Te film

1992-09-18

1994-03-01

Chaudhuri, Olik

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

437105, 437107, 437126, 437133, 148DIG64, H01L 21203, H01L 2120

Patent

active

052903940

ABSTRACT:
In a method of manufacturing a Hg.sub.1-x Cd.sub.x Te (x=0 to 1) infrared detector using GaAs as a substrate, there is provided a method of depositing a HgCdTe film that has high crystalline quality. By changing the substrate temperature, it is possible to control the plane orientation of a CdTe buffer layer formed on a GaAs (211)B substrate. When the substrate temperature is high, the buffer layer is formed with plane orientation (133) and when the substrate temperature is low, the buffer layer is formed with plane orientation (211). In the former, it is possible to form a film having high crystalline quality as compared with that of a film in the latter.

REFERENCES:
patent: 4960728 (1990-10-01), Schaake et al.
Noreika et al."Characterization of molecular beam epitaxially grown HgCdTe on CdTe and InSb buffer layers"x , J.Vac.Sci.Tech. A 4(4), Jul./Aug. 1986, pp. 2081-2085.
B. V. Shanabrook et al., "Large temperature changes induced by molecular beam epitaxial growth on radiatively heated substrates," Appl. Phys. Lett. 61(19), Nov. 9, 1992, pp. 2338-2340.
"Molecular-beam Epitaxy of Cd.sub.x Hg.sub.1-x Te at D.LETI/LIR.sup.a) ", by A. Million et al., J. Vac. Sci. Technol. A 6(4). Jul./Aug. 1988, pp. 2813-2820.
Molecular Beam Epitaxy and Characterization of CdTe(211) and CdTe(133) films on GaAs(211)B Substrates, by M. D. Lange et al., Appl. Phys. Lett. 58(18), pp. 1988-1990, May 6, 1991.
HgCdTe on Si for Hybrid and Monolithic FPAs, by Ken Zanio, SPIE, vol. 1308, Infrared Detectors and Focal Plane Arrays, pp. 180-193, (1990).
Beven et al "Organometallic Vapor-Phase Epitaxy of Hg.sub.1-x Cd.sub.x Te on (211)-oriented substrates" in J. Appl. Phys 71 (1992), pp. 204-210.

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