Semiconductor memory device of one transistor-one capacitor memo

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357 45, 357 46, H01L 2978

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active

049857185

ABSTRACT:
A semiconductor memory cell of one transistor - one capacitor memory cell type in which a storage capacitor of a first memory cell is formed on a switching transistor of a second memory cell as well as on a switching transistor of the first memory cell, and a storage capacitor of the second memory cell is formed on the switching transistor of the first memory cell as well as on the switching transistor of the second memory cell.

REFERENCES:
patent: 4612629 (1986-09-01), Harari
patent: 4649406 (1987-03-01), Takemae et al.
patent: 4685197 (1987-08-01), Tigelaar et al.
patent: 4849801 (1989-07-01), Honjyo et al.
M. Koyanagi et al., "Novel High Density, Stacked Capacitor MOS Ram", Int'l Electron Devices Meeting, 1978, pp. 348-351.

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