Semiconductor device and manufacturing method thereof

Details Semiconductor device and manufacturing method thereof Semiconductor device and manufacturing method thereof

1995-10-26

1998-05-05

Prenty, Mark V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257407, H01L 2976

Patent

active

057478546

ABSTRACT:
A semiconductor device includes at least two adjacent regions which have different threshold values and each of which has a discrete channel region of a first conductivity type, a common source and a common drain of a second conductivity type with the discrete channel region disposed therebetween, and a common gate formed above the discrete channel region. With this structure, the operation speed of the circuit can be maintained, a through current, particularly a through current at the time of operation can be reduced, and the power consumption can be lowered.

REFERENCES:
patent: 3855610 (1974-12-01), Masuda et al.
patent: 4395725 (1983-07-01), Parekh
patent: 5231299 (1993-07-01), Ning et al.

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