Semiconductor device with reduced breakdown voltage between the

Details Semiconductor device with reduced breakdown voltage between the Semiconductor device with reduced breakdown voltage between the

1996-09-30

1998-05-05

Fahmy, Wael

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257331, 257341, H01L 2976, H01L 2994, H01L 31062

Patent

active

057478511

ABSTRACT:
A concave type DMOS transistor structure can attain improvement in a life-time of a gate insulating film. An initial groove portion is thermally oxidized with a silicon nitride film as a mask. A LOCOS oxide film is formed by this oxidation; concurrently, a U-groove is formed due to the erosion of the surface of an epitaxial layer by the LOCOS oxide film, and moreover the configuration of the groove is fixed. At this time, an inlet corner portion of the initial groove formed by chemical dry etching remains as a curving portion at a sidewall surface of the groove. Thereafter, a gate insulating film is formed, but thickness of the gate insulating film is controlled to be thicker on a groove inlet-portion side than on a groove bottom-portion side, with the curving portion as the boundary.

REFERENCES:
patent: 5460985 (1995-10-01), Tokura et al.
patent: 5470770 (1995-11-01), Takahashi et al.
Tokura et al: "Concave-DMOSFET: A New Super-Low On-Resistance Power MOSFET", Jpn J. appl. Phys., vol. 34 No. 2b (1995), pp. 903-908.
Tokura et al: "The DMOS Consisting of Channel Region Defined by LOCOS (LOCOS-DMOS): A New Process/Device Technology for Low On-Resistance Power MOSFET," 5th International Symposium on Power Semiconductor Devices and ICs, May 18-20, 1994, pp. 135-139.
Tokura et al: "Concave-DMOSFET: A New Super Lon On-Resistance Power MOSFET", 1994 International Conference on Solid State Devices and Materials, Aug. 23-26, 1994, pp. 736-765.
Sakai et al: "Method to Improve the Surface Planarity of Locally Oxidized Silicon Devices", J.Electrochem. Soc.: Solid-State Science and Technology, Feb. 1977, pp. 318-320.

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