Method for manufacturing metallized semiconductor components

Details Method for manufacturing metallized semiconductor components Method for manufacturing metallized semiconductor components

1983-08-16

1985-01-22

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156656, 1566591, 427102, 427103, 430318, C23F 102, B44C 122, C03C 1500, C03C 2506

Patent

active

044950268

ABSTRACT:
A method for the manufacture of metallized semiconductor components, particularly power semiconductor components such as thyristors in which the semiconductor substrate is covered with at least three metal layers including a base layer attached to the substrate, an intermediate layer, and an upper layer upon which the various photoresist compositions are located to define the electrode structures, the intermediate layer being composed of a metal which has different solubility characteristics than either the upper or lower metal layers so that the various layers can be selectively etched by means of suitable solvents.

REFERENCES:
patent: 3686080 (1972-08-01), Banfield et al.
patent: 3883947 (1975-05-01), Kruger et al.
IBM Technical Disclosure Bulletin, vol. 20, No. 8, Jan. 1978, Chrome-Copper-Chrome Lift-Off Process, H. Dalal et al., pp. 3080-3081.

Affiliated with

Also associated with

Rating

Method for manufacturing metallized semiconductor components does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for manufacturing metallized semiconductor components, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for manufacturing metallized semiconductor components will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-565448