Semiconductor diode with depleted polysilicon gate structure and

Details Semiconductor diode with depleted polysilicon gate structure and Semiconductor diode with depleted polysilicon gate structure and

1998-08-31

2000-01-18

Thomas, Tom

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257356, 257339, 257328, 257546, H01L 2362, H01L 2976, H01L 2900

Patent

active

060159936

ABSTRACT:
A high voltage tolerant diode structure for mixed-voltage, and mixed signal and analog/digital applications. The preferred silicon diode includes a polysilicon gate structure on at least one dielectric film layer on a semiconductor (silicon) layer or body. A well or an implanted area is formed in a bulk semiconductor substrate or in a surface silicon layer on an SOI wafer. Voltage applied to the polysilicon gate film, electrically depletes it, reducing voltage stress across the dielectric film. An intrinsic polysilicon film may be counter-doped, implanted with a low doped implantation, implanted with a low doped source/drain implant, or with a low doped MOSFET LDD or extension implant. Alternatively, a block mask may be formed over the gate structure when defining the depleted-polysilicon gate silicon diode to form low series resistance diode implants, preventing over-doping the film. Optionally, a hybrid photoresist method mey be used to form higher doped edge implants in the silicon to reduce diode series resistance without a block mask.

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