Field effect transistor structure of a diving channel device

Details Field effect transistor structure of a diving channel device Field effect transistor structure of a diving channel device

1995-08-24

1996-11-12

Fahmy, Wael M.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257331, 257385, H01L 2976, H01L 2994, H01L 31062

Patent

active

055743021

ABSTRACT:
This invention describes a diving channel device structure and a method of forming the diving channel device structure using deep vertical trenches formed in a silicon substrate crossing shallow vertical trenches formed in the same silicon substrate. The deep vertical trenches are filled with a first heavily doped polysilicon to form the sources and drains of field effect transistors. The shallow vertical trenches are filled with a second highly doped polysilicon to form the gates of the transistors. The device structure provides reduced drain and source resistance which remains nearly constant when the device is scaled to smaller dimensions. The device structure also provides reduced leakage currents and a plane topography. The device structure forms a large effective channel width when the device is scaled to smaller dimensions.

REFERENCES:
patent: 5095347 (1992-03-01), Kirsch
patent: 5111260 (1992-05-01), Malhi et al.
patent: 5180680 (1993-01-01), Yang
patent: 5204280 (1993-04-01), Dhong et al.

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