Method of making a body contact for a MOSFET device fabricated i

Details Method of making a body contact for a MOSFET device fabricated i Method of making a body contact for a MOSFET device fabricated i

1995-11-09

1996-11-12

Wilczewski, Mary

Fishing, trapping, and vermin destroying

437 24, 437 26, 437 40, 437 44, H01L 21265

Patent

active

055739610

ABSTRACT:
A process for fabricating a MOSFET device, on a silicon on insulator layer, in which a body contact to the silicon on insulator layer exists, has been developed. The process features creating a heavily doped P type body contact region in a lightly doped source and drain region of the MOSFET, via ion implantation through a metal silicide layer. The addition of the body contact results in more controllable device characteristics, in terms of drain currents, etc., than for counterparts fabricated in silicon on insulator layer, without the use of a body contact.

REFERENCES:
patent: H986 (1991-11-01), Codella et al.
patent: 4078947 (1978-03-01), Johnson et al.
patent: 4173818 (1979-11-01), Bassous et al.
patent: 4946799 (1990-08-01), Blake et al.
patent: 4975126 (1990-12-01), Margail et al.
patent: 5024960 (1991-06-01), Haken
patent: 5185280 (1993-02-01), Houston et al.
patent: 5294821 (1994-03-01), Iwamatsu
patent: 5371394 (1994-12-01), Ma et al.
patent: 5422287 (1995-06-01), So
patent: 5424225 (1995-06-01), Yamaguchi et al.
patent: 5427964 (1995-06-01), Kaneshiro et al.
patent: 5444002 (1995-08-01), Yang
patent: 5510279 (1996-04-01), Chien et al.
patent: 5514611 (1996-05-01), Kim et al.

Affiliated with

Also associated with

Rating

Method of making a body contact for a MOSFET device fabricated i does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of making a body contact for a MOSFET device fabricated i, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of making a body contact for a MOSFET device fabricated i will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-562041