Method for process control of a plasma reaction

Details Method for process control of a plasma reaction Method for process control of a plasma reaction

1979-06-25

1981-04-21

Massie, Jerome W.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156643, 156646, 204192E, 356 72, H01L 21306

Patent

active

042630886

ABSTRACT:
An apparatus and method for controlling a plasma etching reaction. The plasma reaction is controlled by monitoring the output voltage of an optical detector which is responsive to emissions emanating from the reaction. As the output of the detector changes indicating that the first portion of the etching process has been completed, the average power density supplied to the reaction is reduced by switching the applied power from a continuous wave to a pulsed mode. The reaction is allowed to continue the completion in the reduced power mode.

REFERENCES:
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patent: 4115184 (1978-09-01), Roulsen
patent: 4198261 (1980-04-01), Busta et al.
patent: 4208240 (1980-06-01), Latos
patent: 4209357 (1980-01-01), Gorin
Desiletes, "Multiple--Detector" IBM Technical Disclosure Bulletin, vol. 21, No. 3 (8/78) pp. 1035-1037.
Hirobe et al., "End Point--Spectroscopy" J. of Electro Chemical Society (1/80) p. 234.
Ukai et al., "End-Point--Monitoring" J. of Vacuum Science Technology, vol. 16, No. 2, (4/79) pp. 385-387.
Lanzaro, "Individual Wafer Etch.--Reactor" IBM Tech. Disclosure Bulletin, vol. 22, No. 3 (8/79) pp. 1008-1009.
Alcorn, "Determining--Holes" IBM Technical Disclosure Bulletin, vol. 19, No. 3, (8/76) pp. 982-983.

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