Process for producing epitaxial layers

Details Process for producing epitaxial layers Process for producing epitaxial layers

1980-02-11

1981-04-21

Newsome, John H.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

219 1049R, 427 451, 427 46, 427 82, 427 86, C23C 1300

Patent

active

042630878

ABSTRACT:
Epitaxial layers are formed by introducing a reaction gas mixture into a reaction vessel in which semiconductor substrates are located, under a pressure of not higher than 1333 Pa (10 Torr), and heating said semiconductor substrates by high frequency induction power so that layers grow epitaxially on said semiconductor substrates. The frequency f of high frequency power is not higher than 50 kHz, and the pressure P in said reaction vessel is maintained in the following range ##STR1## wherein, P is the pressure in units of Pa or Torr in the reaction vessel and f is the frequency in kHz of said high frequency power.

REFERENCES:
patent: 3682699 (1972-08-01), Koga et al.
patent: 3765960 (1973-10-01), Boss et al.
patent: 3900597 (1975-08-01), Chruma et al.

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