Static information storage and retrieval – Read/write circuit – Having fuse element
Patent
1998-10-20
2000-07-11
Mai, Son
Static information storage and retrieval
Read/write circuit
Having fuse element
365203, 36518509, G11C 700
Patent
active
060882816
ABSTRACT:
A semiconductor memory device for a flash EEPROM includes MOS transistors, each used as a fuse element for storing function control data and having a stacked gate structure in which a floating gate and a control gate are stacked on each other, and a sequence control circuit for pre-charging the drain of a MOS transistor as a fuse element upon reception of a predetermined control signal, reading out data from the MOS transistor after the pre-charge operation, and latching the readout data.
REFERENCES:
patent: 5237534 (1993-08-01), Tanaka et al.
patent: 5249153 (1993-09-01), Conan
patent: 5671186 (1997-09-01), Igura
patent: 5748529 (1998-05-01), Lee
Miyakawa Tadashi
Otsuka Nobuaki
Tomita Naoto
Kabushki Kaisha Toshiba
Mai Son
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