Nonvolatile semiconductor memory device

Details Nonvolatile semiconductor memory device Nonvolatile semiconductor memory device

1996-06-05

1997-04-01

Nguyen, Viet Q.

Static information storage and retrieval

Floating gate

Particular connection

36518514, 36518523, 3651852, G11C 1140

Patent

active

056173539

ABSTRACT:
The present invention provides an electrically erasable and programmable nonvolatile semiconductor memory device (EEPROM) with NAND structured cells which is capable of reducing the number of peripheral circuits required to drive each memory block. The EEPROM according to the present invention includes memory blocks having transfer transistors controlled by a memory block selection signal, wherein the transfer transistors serve as a path through which control gate driving signals are supplied, and wherein control gate driving signals are applied to word lines at full voltage due to a self-boosting operation of each transfer transistor.

REFERENCES:
patent: 5043942 (1991-08-01), Iwata et al.
patent: 5075890 (1991-12-01), Itoh et al.
patent: 5270969 (1993-12-01), Iwahashi
patent: 5295096 (1994-03-01), Nakajima
patent: 5440509 (1995-08-01), Momodomi et al.
patent: 5473563 (1995-12-01), Suh et al.
patent: 5541879 (1996-07-01), Suh et al.

Affiliated with

Also associated with

Rating

Nonvolatile semiconductor memory device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Nonvolatile semiconductor memory device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Nonvolatile semiconductor memory device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-545022