Semiconductor device and manufacturing method

Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – With semiconductor element forming part

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

257698, 257700, 257737, 257738, 438118, H01L 2306

Patent

active

060877170

ABSTRACT:
To completely suppress or minimize the voids formed between the insulating substrate and the IC chip in order to prevent the problems of separation and cracking of the chip caused by the aforementioned voids. The present invention is preferably adopted for the Chip Six Package type package or other package types equipped with solder bumps or other external connecting terminals directly beneath the IC chip. For insulating substrate (3), on its chip-carrying surface, there is pattern element (6) in the region beneath the IC chip and free of conductor pattern elements (4) in addition to conductor pattern element (4) for forming electrical connection between the electrode pads and the external connecting terminals of the chip. Said pattern element (6) divides said region into plural small regions A. IC chip (2) is bonded through die paste on insulating substrate (3) such that an end of conductor pattern element (4), pattern element (6) and divided small regions A are covered. Pattern element (6) acts to reduce the shifting of die paste (9) before curing due to the surface tension. As a result, the formation of voids beneath the chip can be completely prevented or minimized.

REFERENCES:
patent: 5592025 (1997-01-01), Clark et al.
patent: 5616958 (1997-04-01), Laine et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Semiconductor device and manufacturing method does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device and manufacturing method, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and manufacturing method will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-544739

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.