Gate having a barrier of titanium silicide

Details Gate having a barrier of titanium silicide Gate having a barrier of titanium silicide

1998-02-11

2000-07-11

Chaudhuri, Olik

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

438592, H01L 2176

Patent

active

060877006

ABSTRACT:
A method of fabricating a gate having a barrier layer of titanium silicide is comprised of the steps of forming a layer of gate oxide. The gate oxide may be formed using a standard LOCOS process. A layer of doped polysilicon is deposited over the layer of gate oxide. A layer of titanium silicide is formed in a predetermined relationship with respect the layer of doped polysilicon, i.e., it may be deposited on top of the polysilicon or formed in a top surface of the polysilicon layer. A layer of tungsten silicide is deposited on top of the layer of titanium silicide. The layers of gate oxide, doped polysilicon, titanium silicide, and tungsten silicide are etched to form the gate. A gate thus fabricated is also disclosed.

REFERENCES:
patent: 4886764 (1989-12-01), Miller et al.
patent: 4900690 (1990-02-01), Tamura
patent: 4974056 (1990-11-01), Brodsky et al.
patent: 5023201 (1991-06-01), Stanasolovich et al.
patent: 5138432 (1992-08-01), Stanasolovich et al.
patent: 5202287 (1993-04-01), Joshi et al.
patent: 5364803 (1994-11-01), Lur et al.
patent: 5572046 (1996-11-01), Takemura
patent: 5654241 (1997-08-01), Kakumu
Adler, E., M. Ishaq; "Process for Fabricating Field-Effect Transistors with Polysilicon Gates containing Metal Silicide"; IBm Technical Disclosure Bulletin; vol. 26, No. 5, Oct. 1983.
"Underlayer for Polycide Process"; IBM Technical Disclosure Bulletin; vol. 28, No. 5, Feb. 1986.

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