Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

1997-03-21

2000-07-11

Tran, Minh Loan

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257 57, 257 59, 257 66, 257351, H01L 310376, H01L 2976, H01L 2701, H01L 31036

Patent

active

060876980

ABSTRACT:
A semiconductor device includes an underlying layer formed by a first insulation layer, a plurality of island semiconductor layers formed on the first insulation layer, source and drain regions formed in each of the island semiconductor layers, a first gate electrode formed between the source and drain regions and formed on and insulated from the island semiconductor layer, a second insulation layer formed on the sides of the island semiconductor layer and along the periphery of the first gate electrode, the second insulation layer being higher than the surface of the island semiconductor layer and lower than the surface of the first gate electrode, and a second gate electrode formed over both the first gate electrode and the second insulation layer.

REFERENCES:
patent: 4523963 (1985-06-01), Ohta et al.
patent: 5120667 (1992-06-01), Tarui et al.
patent: 5188973 (1993-02-01), Omura et al.
patent: 5294823 (1994-03-01), Eklund et al.
patent: 5327001 (1994-07-01), Wakai et al.
patent: 5396099 (1995-03-01), Kitajima
patent: 5459347 (1995-10-01), Omura et al.
patent: 5482871 (1996-01-01), Pollack
patent: 5482877 (1996-01-01), Rhee
patent: 5488004 (1996-01-01), Yang
patent: 5493130 (1996-02-01), Dennison et al.
patent: 5494837 (1996-02-01), Subramanian et al.
patent: 5518949 (1996-05-01), Chen
patent: 5541434 (1996-07-01), Nicholl et al.
patent: 5591988 (1997-01-01), Arai et al.
patent: 5663586 (1997-09-01), Lin
K. Shibahara, et al., "Trench Isolation with .gradient. (NABLA)-Shaped Buried Oxide for 256Mega-Bit Drams", IEDM Technical Digest, 1992, pp. 275-278.

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