Stacked tunneling dielectric technology for improving data reten

Details Stacked tunneling dielectric technology for improving data reten Stacked tunneling dielectric technology for improving data reten

1998-05-28

2000-07-11

Prenty, Mark V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257411, H01L 29788

Patent

active

060876964

ABSTRACT:
An improved EEPROM cell structure and a method of fabricating the same is provided so as to improve data retention. The EEPROM cell includes a stacked dielectric structure consisting of a thin tunnel oxide layer and a high-k dielectric layer to function as the tunneling dielectric barrier so as to suppress leakage current.

REFERENCES:
patent: 4115914 (1978-09-01), Harari
patent: 4200474 (1980-04-01), Morris
patent: 5418388 (1995-05-01), Okudaira et al.

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