Semiconductor device with reduced stepped portions

Details Semiconductor device with reduced stepped portions Semiconductor device with reduced stepped portions

1997-10-17

2000-07-11

Tran, Minh Loan

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257249, 257296, 257300, H01L 27108, H01L 27148

Patent

active

06087693&

ABSTRACT:
A first conductive layer and a second conductive layer are formed apart from each other on a surface of a semiconductor substrate. A first contact hole for exposing a surface of first conductive layer is formed in an interlayer insulating film. A first interconnection layer is buried in first contact hole so as to be in contact with first conductive layer. The position of the surface of first interconnection layer is the same as or lower than the surface of interlayer insulating film. The surface of first interconnection layer is covered with an insulating film. A second contact hole for exposing a surface of second conductive layer is provided in interlayer insulating film. A second conductive layer is connected to second conductive layer through second contact hole.

REFERENCES:
patent: 5383088 (1995-01-01), Chapple-Solo et al.
patent: 5539231 (1996-07-01), Suganaga et al.

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