Semiconductor device having lower minority carrier noise

Details Semiconductor device having lower minority carrier noise Semiconductor device having lower minority carrier noise

1997-05-07

2000-07-11

Munson, Gene M.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257394, 257400, H01L 27108

Patent

active

060876913

ABSTRACT:
On a p.sup.++ substrate (1) provided is a p.sup.- epitaxial layer (2) having an impurity concentration lower than that of the p.sup.++ substrate (1). A p well (3) is formed in a portion of the p.sup.- epitaxial layer 2 and further n.sup.+ diffusion layers (4a and 4b) are selectively formed in the p well (3). A memory cell capacitor (5) is connected onto the n.sup.+ diffusion layer 4b. On the other hand, an no diffusion layer (6) is selectively formed in the p.sup.- epitaxial layer (2) separately from the p well (3), to which an external signal input circuit (7) is connected. Further, a p.sup.++ diffusion layer 9a is provided between the external signal input circuit (7) serving as a source for injection of the minority carriers, i.e., electrons and the n.sup.+ diffusion layer (4b) connected to the memory cell capacitor (5), for blocking the entry of the minority carries. The p.sup.++ diffusion layer (9a) extends up to such a depth as to reach the p.sup.++ substrate (1) from a surface of the p.sup.- epitaxial layer (2). Having this structure, a semiconductor device which does not allow the electrons injected to the p.sup.- epitaxial layer from the external signal input circuit to reach the memory cell capacitor can be provided.

REFERENCES:
patent: 4044373 (1977-08-01), Nomiya et al.
patent: 4163245 (1979-07-01), Kinoshita
patent: 4315781 (1982-02-01), Henderson
patent: 4587542 (1986-05-01), Rao
patent: 4635085 (1987-01-01), Taguchi
patent: 4658283 (1987-04-01), Koyama
patent: 4695864 (1987-09-01), Kawamoto
patent: 5789789 (1998-08-01), Hayakawa

Affiliated with

Also associated with

Rating

Semiconductor device having lower minority carrier noise does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device having lower minority carrier noise, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device having lower minority carrier noise will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-544535