MISFET device with ferroelectric gate insulator

Details MISFET device with ferroelectric gate insulator MISFET device with ferroelectric gate insulator

1997-05-15

2000-07-11

Martin-Wallace, Valencia

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257 33, 257 35, 257190, 365145, H01L 2994

Patent

active

060876875

ABSTRACT:
A semiconductor device is provided, which is readily and correctly designed even when the semiconductor device is further miniaturized. This device includes a semiconductor substrate, a source region and a drain region formed to be apart from each other in the substrate, a gate insulator formed on a main surface of the substrate, and a gate electrode formed on the gate insulator. The gate insulator includes a ferroelectric region and a dielectric region located in a same level as that of the ferroelectric region. The ferroelectric region is contacted with the main surface of the substrate and the gate electrode. The dielectric region is contacted with the main surface of the substrate and the ferroelectric region. The whole bottom of the ferroelectric region is contacted with the main surface of the substrate in such a way that no overlap exists between the ferroelectric region and the dielectric region.

REFERENCES:
patent: 5270231 (1993-12-01), Sameshima et al.
patent: 5274249 (1993-12-01), Xi et al.
patent: 5303182 (1994-04-01), Nakao et al.
patent: 5621681 (1997-04-01), Moon
patent: 5696392 (1997-12-01), Char et al.
Japanese Office Action, dated Dec. 1, 1998, with English language translation of Japanese Examiner's comments.

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