Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Patent
1997-02-28
2000-07-11
Abraham, Fetsum
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
257 61, 257 72, 257347, 257348, 257349, 257350, 257351, 257352, 257353, H01L 2978
Patent
active
060876786
ABSTRACT:
Thin-film transistor display devices include composite electrodes which provide low resistance contacts and paths for electrical signals and are less susceptible to parasitic metal migration which can limit display quality and lifetime. In particular, a thin-film transistor (TFT) display device is provided having an insulated gate electrode on a face of a substrate (e.g., transparent substrate) and a semiconductor layer on the insulated gate electrode, opposite the face of the substrate. Spaced apart source and drain electrodes are also provided on the semiconductor layer. These source and drain electrodes each preferably comprise a composite of at least two layers containing respective metals therein of different element type. Preferably, one of the layers comprises a metal which is capable of forming a low resistance contact with electrodes such as a pixel electrode (e.g., transparent indium-tin-oxide electrode) and the other of the layers comprises a relatively low resistance metal so that the overall effective resistance of each composite electrode is maintained at a low level.
REFERENCES:
patent: 5153690 (1992-10-01), Tsukada et al.
patent: 5177577 (1993-01-01), Taniguchi et al.
patent: 5731856 (1998-03-01), Kim et al.
patent: 5808706 (1998-09-01), Bae
Abraham Fetsum
Samsung Electronics Co,. Ltd.
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