Mosfet with fully overlapped lightly doped drain structure and m

Details Mosfet with fully overlapped lightly doped drain structure and m Mosfet with fully overlapped lightly doped drain structure and m

1995-06-30

1996-11-19

Prenty, Mark V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257900, 437 40, H01L 2976, H01L 21265

Patent

active

055765742

ABSTRACT:
A MOSFET with a fully overlapped LDD (lightly doped drain) structure, and the manufacturing method for the MOSFET, are disclosed. The MOSFET has a first type of semiconductor material having a source and a drain, respectively, constructed of a second type of lightly doped regions and heavily doped regions, and a channel region between the source and the drain; a gate insulator formed over the channel region and the second type of lightly doped regions; and a gate including a first conductive layer and a second conductive layer. The first conductive layer is formed over the gate insulator and the second conductive layer is formed over the first conductive layer above the channel region.

REFERENCES:
patent: 5162884 (1992-11-01), Liou et al.
patent: 5182619 (1993-01-01), Pfiester
patent: 5241203 (1993-08-01), Hsu et al.
patent: 5355011 (1994-10-01), Takata
patent: 5418392 (1995-05-01), Tanabe
patent: 5471080 (1995-11-01), Satoh et al.

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