Semiconductor integrated circuit device and method of manufactur

Details Semiconductor integrated circuit device and method of manufactur Semiconductor integrated circuit device and method of manufactur

1994-04-29

1996-11-19

Prenty, Mark V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257591, 257607, 257755, H01L 2976

Patent

active

055765726

ABSTRACT:
A semiconductor integrated circuit device having a bipolar transistor and contact in the form of a wired layer by using different impurities for doping the emitter electrode and the wired layer of the device, both of which are made of polysilicon. The emitter electrode, formed on an emitter region of a p-type silicon semiconductor substrate, is doped with an n-type impurity having a low diffusion coefficient. A polysilicon wired layer, formed on an impurity diffusion region in an active region of the semiconductor substrate, is doped with another impurity that can effectively destroy native oxide films. With such an arrangement of selectively using impurities, the temperature of thermally treating the emitter region can be less than 850.degree. C.

REFERENCES:
patent: 5001081 (1991-03-01), Tuntasood et al.
patent: 5089433 (1992-02-01), Anand et al.
patent: 5091760 (1992-02-01), Maeda et al.
patent: 5150184 (1992-09-01), Eklund
patent: 5221853 (1993-06-01), Joshi et al.

Affiliated with

Also associated with

Rating

Semiconductor integrated circuit device and method of manufactur does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor integrated circuit device and method of manufactur, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor integrated circuit device and method of manufactur will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-542880