Semiconductor device having CMOS circuit

Details Semiconductor device having CMOS circuit Semiconductor device having CMOS circuit

1995-05-10

1996-11-19

Loke, Steven H.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257371, 257409, 257500, H01L 2976, H01L 2994, H01L 31062, H01L 2900

Patent

active

055765700

ABSTRACT:
Disclosed is a CMOS integrated circuit, in which a high voltage circuit with both positive and negative polarities and a large scale low voltage circuit are formed on the same chip. The high voltage circuit is composed of a CMOS circuit having an nMOS transistor formed on a p-type semiconducting substrate, and a pMOS transistor formed in an n-well formed on the p-type semiconducting substrate. The low voltage circuit is composed of a CMOS circuit having a pMOS transistor which is formed in an n-well formed on the p-type semiconducting substrate, and an nMOS transistor formed in a p-well formed in the n-well.

REFERENCES:
patent: 5105252 (1992-04-01), Kim et al.
patent: 5239197 (1993-08-01), Yamamoto
patent: 5386135 (1995-01-01), Nakazato et al.

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