Method of manufacturing bit line

Details Method of manufacturing bit line Method of manufacturing bit line

1999-02-16

2000-07-11

Nelms, David

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438649, H01L 2120

Patent

active

060872608

ABSTRACT:
A method for manufacturing a bit line. A substrate having a dielectric layer on the substrate and a contact hole penetrating through the dielectric layer and exposing portions of the substrate is provided. A patterned conductive layer is formed on the dielectric layer and fills the contact hole. The surface of the patterned conductive layer is converted into an oxide layer. The oxide layer is removed. A silicide layer is formed on the patterned conductive layer.

REFERENCES:
patent: 5795827 (1998-08-01), Liaw et al.

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