Transistor fabrication process employing a common chamber for ga

Details Transistor fabrication process employing a common chamber for ga Transistor fabrication process employing a common chamber for ga

1998-09-10

2000-07-11

Niebling, John F.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

438586, 438588, 438591, 438907, 438908, 438763, 438764, 438778, 438788, 438792, H01L 213205

Patent

active

060872497

ABSTRACT:
An integrated circuit transistor is provided having a gate oxide and a gate conductor arranged upon a semiconductor topography, the gate oxide and gate conductor are formed within a common chamber. The initial semiconductor topography includes a silicon substrate having isolation regions disposed within its upper surface. The semiconductor topography may include an defined region, or well, doped opposite the substrate. The semiconductor topography is first placed in the common chamber. A separate chamber is operably placed gaseous communication with the common chamber. A plasma is created within the separate chamber, causing nitrogen, silicon, and oxygen containing compounds therein to form ions, molecular fragments, and excited molecules which are transported to the common chamber. The ions, molecular fragments, and excited molecules react and bombard the surface of the semiconductor topography to form an oxide layer thereon. The oxide layer is incorporated with nitrogen atoms which act as barrier atoms. Polysilicon is then deposited upon the oxide layer by CVD within the common chamber. The semiconductor topography is never exposed to ambient conditions outside the common chamber during and between the plasma oxide formation and the polysilicon deposition steps. Preventing ingress of outside ambient helps minimize contamination from entering the oxide. During the polysilicon deposition, dopant atoms are forwarded and become entrained within the polysilicon. The barrier atoms within the deposited oxide helps minimize dopant atoms from passing through the oxide and entering the channel below the oxide.

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