Method of gettering crystallization catalyst for forming a silic

Details Method of gettering crystallization catalyst for forming a silic Method of gettering crystallization catalyst for forming a silic

1998-02-11

2000-07-11

Chaudhari, Chandra

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

Amorphous semiconductor

438473, 438488, 257DIG913, H01L 2120

Patent

active

060872454

ABSTRACT:
A mask including a material, which has heat resistance and light absorptivity, is selectively formed on a crystalline silicon film containing a catalytic element. Next, by using the mask, phosphorus is implanted into the silicon film and an implanted portion of the silicon film is transformed into amorphous. Then the silicon film is heated by a rapid thermal annealing (RTA) method, so that the temperature of the portion covered with the mask becomes higher than other portions. As a result, the catalytic element moves from the high temperature portion covered with the mask to the lower temperature amorphous portion in which phosphorus has been implanted and which has a large gettering capacity. Thus, the concentration of the catalytic element in the portion covered with the mask is lowered, and a semiconductor device is manufactured by using the film.

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