Semiconductor device having an MIS structure

Details Semiconductor device having an MIS structure Semiconductor device having an MIS structure

1996-05-31

1997-04-01

Crane, Sara W.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257631, 257632, 257289, H01L 2978

Patent

active

056169477

ABSTRACT:
A semiconductor device including a GaAs semiconductor substrate, an insulating layer which is made of material selected from the group MgS, MgSSe and CaZnS and is formed on the GaAs substrate, and a conductive electrode formed on the insulating layer.

REFERENCES:
patent: 4859253 (1989-08-01), Buchanan et al.
patent: 5294818 (1994-03-01), Fujita et al.

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