Process for forming stacked contacts and metal contacts on stati

Details Process for forming stacked contacts and metal contacts on stati Process for forming stacked contacts and metal contacts on stati

1996-04-08

1996-11-19

Tsai, Jey

Fishing, trapping, and vermin destroying

437192, 148DIG20, H01L 2144, H01L 2148

Patent

active

055762433

ABSTRACT:
A method for fabricating a novel plug structure for low resistance ohmic stacked contacts and at the same time forming metal contacts to devices on a SRAM cell was achieved. The method involved forming electrically conductive plugs in the stacked contact openings to form ohmic connections between a P+ doped polysilicon layer and a N+ doped polysilicon layer and thereby increasing the on current (I.sub.on) of the SRAM cell. The electrical conductive plugs are also simultaneously formed in metal contact openings to devices areas elsewhere on the substrate. The process for the plug structure also reduces the mask set by one masking level over the prior art process.

REFERENCES:
patent: 4980732 (1990-12-01), Okazawa
patent: 5462893 (1995-10-01), Matsuoka et al.
patent: 5476816 (1995-12-01), Mautz et al.
patent: 5529955 (1996-06-01), Hibino et al.

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