Thin film phototransistor and photosensor array using the same

Details Thin film phototransistor and photosensor array using the same Thin film phototransistor and photosensor array using the same

1991-12-09

1993-04-06

James, Andrew J.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257448, 257459, H01L 2701, H01L 2714, H01L 3100

Patent

active

052006344

ABSTRACT:
A thin film phototransistor is provided having a field effect transistor structure where at least one end of the gate electrode is not overlapped with an electrode neighboring the end. Such a thin film phototransistor has: (1) a function as a photosensor and a switching function; (2) a high input impedance; (3) a voltage control function; and (4) a high photocurrent ON/OFF ratio. This thin film phototransistor can be used independently or together with a thin film transistor for picture elements of a one-dimensional or two-dimensional photosensor array, producing satisfactory results.

REFERENCES:
patent: 4425572 (1984-01-01), Takafaji et al.
patent: 4752814 (1988-06-01), Taan
patent: 5083175 (1992-01-01), Hack et al.
"Hydrogenation of Transistors Fabricated in Polycrystalline-Silicon Films" by Kamins et al. IEEE Aug./1980 pp. 159-161.

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