Silicon oxide germanium resonant tunneling

Details Silicon oxide germanium resonant tunneling Silicon oxide germanium resonant tunneling

1995-06-07

1997-04-01

Bowers, Jr., Charles L.

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

148DIG58, 148DIG59, 148DIG116, 148DIG160, 438763, 438979, 438507, H01L 2131

Patent

active

056165153

ABSTRACT:
A resonant tunneling diode (400) made of a germanium quantum well (406) with silicon oxide tunneling barriers (404, 408). The silicon oxide tunneling barriers (404, 408) plus germanium quantum well (406) may be fabricated by oxygen segregation from germanium oxides to silicon oxides.

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