Chemistry: electrical and wave energy – Processes and products – Coating – forming or etching by sputtering
Patent
1998-06-05
2000-07-11
Diamond, Alan
Chemistry: electrical and wave energy
Processes and products
Coating, forming or etching by sputtering
20429804, 20429811, 20429812, 20429813, 20429815, 20429823, 20429827, 20429828, 20429829, 20419215, 2041922, 20419221, 427128, 427129, 427130, 427131, 427402, 427404, 427307, C23C 1446, B01J 1908, B05D 512
Patent
active
060867272
ABSTRACT:
An ion beam sputtering system having a chamber, an ion beam source, a multiple targets, a shutter, and a substrate stage for securely holding a wafer substrate during the ion beam sputtered deposition process in the chamber. The substrate stage is made to tilt about its vertical axis such that the flux from the targets hit the wafer substrate at a non-normal angle resulting in improved physical, electrical and magnetic properties as well as the thickness uniformity of the thin films deposited on the substrate in the ion beam sputtering system.
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English translation of JP 2-251143, Oct. 1990.
Diamond Alan
Gill William D.
International Business Machines - Corporation
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