Plasma etching method and device manufacturing method thereby

Details Plasma etching method and device manufacturing method thereby Plasma etching method and device manufacturing method thereby

1995-03-24

1996-11-19

Powell, William

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

1566571, 156345, 15665911, 216 41, 216 67, 216 79, H01L 2100

Patent

active

055758878

ABSTRACT:
A plasma etching method, which can form concave parts and/or opening parts on a substrate by performing etching at a high speed and does not damage an element part formed on the surface of the substrate, is disclosed. On a semiconductor substrate with one surface as an element part forming surface and the other surface having an insulating film thereon as an etching surface are formed concave parts and/or opening parts by means of etching by applying a high-frequency electric power to a reactive gas and generating plasma thereby. The substrate is disposed on an electrode having grounded electric potential with the insulating film positioned on the lower side and a conductive part material having grounded electric potential is disposed around the substrate. When one end of the conductive part material is contacted with the side of the etching surface of the substrate, electric charge generated on the surface of the substrate moves to the conductive part material, and the electric potential of the substrate is lowered.

REFERENCES:
patent: 4209357 (1980-06-01), Gorin et al.
patent: 4859277 (1989-08-01), Barna et al.

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