Method for fabricating semiconductor device with chemical-mechan

Details Method for fabricating semiconductor device with chemical-mechan Method for fabricating semiconductor device with chemical-mechan

1995-07-17

1996-11-19

Powell, William

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

1566371, 1566571, 216 38, 216 88, 437228, H01L 2100

Patent

active

055758860

ABSTRACT:
The method for fabricating a semiconductor device disclosed is one in which an insulation film is formed on a metal interconnect by an Electron Cyclotron Resonance Chemical Vapor Deposition (ECR CVD) process capable of applying a radio frequency bias to a substrate, a surface of the insulation film is planarized by a chemical-mechanical polishing (CMP) process, and a surface of the insulation film is cleaned. The ECR CVD process capable of applying a radio frequency bias to a substrate may be a radio frequency bias plasma CVD process or a bias sputtering process. The cleaning of the surface of the insulation film may use a hydrogen fluoride solution. It is easy to control processes without increasing the number of process steps and a high degree of planarization can be realized.

REFERENCES:
patent: 5026666 (1991-06-01), Hills et al.
patent: 5502007 (1996-03-01), Murase
patent: 5502008 (1996-03-01), Hayakawa et al.

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