Method of metalizing a semiconductor wafer

Details Method of metalizing a semiconductor wafer Method of metalizing a semiconductor wafer

1995-05-11

1998-05-05

Niebling, John

Fishing, trapping, and vermin destroying

437190, 437192, 437194, 437197, 437195, H01L 2128

Patent

active

057473609

ABSTRACT:
A method for metallizing semiconductor materials includes two processing steps. In the first step, a layer of an alloy of conductive metal, such as aluminum, and an Alloy Material such as hafnium, tantalum, magnesium, germanium, silicon, titanium, titanium nitride, tungsten and/or a composite of tungsten, is deposited on the surface in a single step from a single source. In the second step, a layer of the conductive metal is deposited over the alloy layer. Thus, using this method, metallization can be conveniently performed using two chambers.

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