Method of automatic control of growing neck portion of a single

Details Method of automatic control of growing neck portion of a single Method of automatic control of growing neck portion of a single

1991-02-28

1993-02-02

Chaudhuri, Olik

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

1566171, 1566181, 1566191, 1566204, 422248, 422249, C30B 1526

Patent

active

051835282

ABSTRACT:
A method for automatically controlling growing a single crystal neck portion by the CZ method, comprising the steps of pulling up a seed crystal (30) at 2 mm/min. for five minutes so as to grow a single crystal 32; next measuring a diameter of the lower end of the crystal; modifying an electric power for heating a melt based on the difference between the measured diameter and a reference value; waiting for five minutes; keeping the electric power constant for 10 minutes with controlling the pulling up speed so as to approach the diameter of the crystal to the reference value and with measuring the pulling up speed repeatedly; and next modifying the power based on the difference between the mean speed and a reference value. The last two steps are repeated alternatively.

REFERENCES:
patent: 3958129 (1976-05-01), Clement et al.
patent: 4058429 (1977-11-01), Duncan et al.
patent: 4207293 (1980-06-01), Scholl et al.
patent: 4258003 (1981-03-01), Hurle et al.
patent: 4565598 (1986-01-01), Seymour
patent: 4591994 (1986-05-01), Washizuka et al.
patent: 4794263 (1988-12-01), Katsuoka et al.
Solid-State Technology, vol. 25, No., May 1982, pp. 89-90, Port Washington, N.Y., U.S.; "Silicon Crystal Growth Furnace".
Patent Abstracts of Japan, "Preparation of Single Crystal", vol. 10, No. 23 (C-325) [2080], Jan. 29, 1986; & JP-A-60 176 989, (Toshiba K.K.), Sep. 11, 1985.

Affiliated with

Also associated with

Rating

Method of automatic control of growing neck portion of a single does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of automatic control of growing neck portion of a single , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of automatic control of growing neck portion of a single will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-5334